TSM104 查看數據表（PDF） - STMicroelectronics
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TSM104 Datasheet PDF : 9 Pages
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TSM104/A
ELECTRICAL CHARACTERISTICS
VCC+ = 5V, Vcc- = Ground, VO = 1.4V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vio
∆Vio
Iio
Iib
Avd
SVR
Vicm
CMR
Isource
Io
Isink
VOH
VOL
SR
GBP
THD
Input Offset Voltage
TSM104, Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
TSM104A, Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
Input Offset Voltage Drift
Input Offset Current
Tmin ≤ Tamb ≤ Tmax
Input Bias Current
Tmin ≤ Tamb ≤ Tmax
Large Signal Voltage Gain
VCC = 15V, RL = 2k
VO = 1.4V to 11.4V
Tmin ≤ Tamb ≤ Tmax
Supply Voltage Rejection Ratio
VCC = 5V to 30V
Input Voltage Mode Voltage Range
VCC = + 30V see note1)
Tmin ≤ Tamb ≤ Tmax
Common Mode Rejection Ratio
Tmin ≤ Tamb ≤ Tmax
Output Current Source
Vo = 2V, Vcc = +15V, Vid = +1V
Output Short Circuit to Ground
VCC = +15V
Output Current Sink
Vid = -1V
VCC = +15V, Vo = +2V
High Level Output Voltage
RL = 10k, VCC+ = 30V
Tamb = 25°C
Tmin ≤ Tamb ≤ Tmax
Low Level Output Voltage
RL = 10k
Tmin ≤ Tamb ≤ Tmax
Slew Rate at Unity Gain
Vi = 0.5 to 3V, VCC = 15V
RL = 2kΩ, CL = 100pF, unity gain
Gain Bandwith Product
VCC = 30V, RL = 2k, CL = 100pF
f = 100kHz, Vin = 10mV
Total Harmonic Distortion
f = 1kHz
AV = 20dB, RL = 2, VCC = 30V
CL = 100pF, Vo = 2Vpp
mV
1
5
6
0.5
3
4
7
µV/°C
2
30
nA
50
20
150
nA
200
V/mV
50
100
25
dB
65
100
V
0
Vcc+ -1.5
0
Vcc+-2
70
85
dB
60
mA
20
40
mA
40
60
10
20
27
28
27
5
0.1
0.3
mA
V
mV
20
20
V/µs
0.5
0.9
MHz
%
0.02
en
Equivalent Input Noise Voltage
f = 1kHz, VCC = 30V, Rs = 100Ω
50
---n---V-----
Hz
Cs Channel Separation
1kHz < f < 20kHz
dB
120
1.
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signal voltage
damage.
should
not
be
allowed
to
go
negative
by
more
than
0.3V.
The
upper
end
of
the
3/9
But either of both inputs can go to +36V without damage
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