TYN1006 查看數據表（PDF） - STMicroelectronics
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TYN1006 Datasheet PDF : 6 Pages
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TYN606 / TYN1006
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VGT
VD = 12 V (D.C.) RL = 33 Ω
MAX.
MAX.
VGD VD = VDRM RL = 3.3 kΩ
Tj = 110°C MIN.
tgt VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs
TYP.
IH IT = 100 mA Gate open
MAX.
IL
IG = 1.2 x IGT
TYP.
dV/dt
Linear slope up to:
VD = 67 % VDRM Gate open
Tj = 110°C MIN.
VTM ITM = 12 A tp = 380 µs
MAX.
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 110°C
MAX.
tq
VD = 67 % VDRM
dITM/dt = 30 A/µs
ITM = 12 A VR = 25 V
dVD/dt = 50 V/µs
Tj = 110°C
TYP.
Table 5: Thermal Resistance
Symbol
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient
Parameter
Value
15
1.5
0.2
2
30
50
200
1.6
10
2
70
Unit
mA
V
V
µs
mA
mA
V/µs
V
µA
mA
µs
Value Unit
2.5 °C/W
60 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
7
6
DC
α = 180°
5
α = 120°
α = 90°
4
α = 60°
3
α = 30°
2
360°
1
IT(AV)(A)
α
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and Tlead)
P(W)
7
α = 180°
6
5
4
3
2
1
0
0
20
Rth = 15°C/W
Rth = 10°C/W
Rth = 5°C/W
Tlead(°C)
Rth = 0°C/W
110
115
120
Tamb(°C)
125
40
60
80
100
120
140
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