EMB4 / UMB4N
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
EMB4
UMB4N
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1*2
PD*1*2
Tj
Tstg
Values
-50
-50
-5
-100
150
150
150
-55 to +150
Unit
V
V
V
mA
mW/Total
℃
℃
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -10mA, IB = -1mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*3
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 Characteristics of built-in transistor.
Values
Unit
Min. Typ. Max.
-50 -
-
V
-50 -
-
V
-5
-
-
V
-
- -500 nA
-
- -500 nA
-
- -300 mV
100 250 600 -
7 10 13 kΩ
- 250 - MHz
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20151118 - Rev.002