DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 4.5 V
TA = 125˚C
15
75˚C
25˚C
10
−25˚C
5
0
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
ID = 4.0 A
VGS = 4.5 V
10 V
10
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain Source Voltage - V
µ PA1803
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 10 V
15
TA = 125˚C
75˚C
10
25˚C
−25˚C
5
0
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 4.0 A
40
30
20
10
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
VDD = 15 V
VGS(on) = 10V
1 RG = 10 Ω
0.1
1
ID - Drain Current - A
tr
td(on)
10
4
Data Sheet D13803EJ2V0DS