VN751S 查看數據表（PDF） - STMicroelectronics

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VN751S

High-side driver

STMicroelectronics 

Reverse polarity protection

8

Reverse polarity protection

VN751S

A schematic solution to protect the IC against a reverse polarity condition is proposed.

This schematic is effective with any type of load connected to the outputs of the IC. The

RGND resistor value can be selected according to the following conditions:

Equation 1

RGND  600 mV / (IS in ON-state max.)

Equation 2

RGND  (-VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can be found in Section 3: Maximum

ratings on page 7.

The power dissipation associated to RGND during reverse polarity condition is:

Equation 3

PD = (-VCC)2 / RGND

This resistor can be shared by several different ICs.

In such case IS value in Equation 1 is the sum of the maximum ON-state currents of the

different devices. Please note that if the microprocessor ground and the device ground are

separated, the voltage drop across the RGND (given by IS in ON-state max. * RGND)

produces a difference between the generated input level and the IC input signal level. This

voltage drop varies depending on how many devices are ON in case of several high-side

switches sharing the same RGND.

Figure 9. Reverse polarity protection

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