VSC830QZ 查看數據表（PDF） - Vitesse Semiconductor
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VSC830QZ Datasheet PDF : 18 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC830
2.7Gb/s Asynchronous
Dual 2x2 Crosspoint Switch
AC Characteristics
Table 3: AC Timing
Symbol
Parameter
Min Typ Max Units
FRATE
Signal path data rate
2.7
Gb/s
FBW
Signal path bandwidth (-3dB)
2.7
GHz
TSKW
TCON
tR, tF
tjP
Channel to channel delay skew
Switch configuration setup time(1)
High-speed output rise/fall times, 20% to 80%(2)
Signal path added jitter, peak-peak(1)
50
ps
1
ns
150
ps
40
ps
NOTES: (1) Tested on a sample basis only, with 223-1 PRBS data, input signal rise/fall time < 150ps. Value stated in table is added
to measurement system jitter. (2) Input signal rise/fall time < 150ps, measured using an alternating 1, 0 pattern.
DC Characteristics (All characteristics are over the specified operating conditions)
Table 4: Power Supply
Symbol
Parameter
Min Typ Max
ICC
Total VCC(P) supply current
350
PD
Power dissipation per output
(Y1A±, Y2A±, Y1B±, Y2B±)
300
PT
Total chip power (all outputs powered on)
1.2
NOTE: Specified with outputs terminated, 100Ω between true and complement, VCC = 3.45V.
Table 5: Select Input Levels—TTL Mode
Units
mA
mW
W
Conditions
Symbol
VIH
VIL
IIH
IIL
Parameter
Input HIGH voltage (TTL)
Input LOW voltage (TTL)
Input HIGH current (TTL)
Input LOW current (TTL)
Min Typ Max Units
Conditions
2.0
V
0.8
V
500
µA VIN = 2.4V
-500
µA VIN = 0.5V
Table 6: Select Input Levels—PECL Mode
Symbol
VIH
VIL
IIH
IIL
Parameter
Input HIGH voltage (PECL)
Input LOW voltage (PECL)
Input HIGH current (PECL)
Input LOW current (PECL)
Min Typ Max Units
Conditions
VCC-
1.0
VCC-
1.6
500
-500
V
V
µA VIN = 2.5V
µA VIN = 1.5V
Table 7: Control Inputs
Symbol
RPEMODE
Parameter
PEMODE pin impedance
Min Typ Max Units
3100
Ω
Conditions
G52192-0, Rev 4.0
05/23/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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