VSC835UB 查看數據表（PDF） - Vitesse Semiconductor

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VSC835UB

2.5 Gbits/sec 34x34 Crosspoint Switch with Signal Detection

Vitesse Semiconductor 

Datasheet

VSC835

VITESSE

SEMICONDUCTOR CORPORATION

2.5 Gbits/sec

34x34 Crosspoint Switch with Signal Detection

Table 6: Control Port input levels (TTL)

Parameter

VIH

VIL

IIH

IIL

VOH

VOL

IOZ

Description

Input HIGH voltage (TTL)

Input LOW voltage (TTL)

Input HIGH current (TTL)

Input LOW current (TTL)

Output HIGH voltage (TTL)

Output LOW voltage (TTL)

Tri-state output current (TTL)

Min Typ Max Units

2.0

—

3.5

V

0

—

0.8

V

—

—

500

µA

—

—

-500

µA

2.4

—

3.0

V

0.1

—

0.4

V

-100

—

100

µA

Conditions

—

—

VIN = 2.4V

VIN = 0.5V

IOH = 2mA

IOL = 1.5mA

VOUT = 0.4V-2.4V

Table 7: Data input levels (differential PECL)

Parameter

VID

VICM

Description

Input differential voltage

Input common-mode voltage

Min Typ Max Units

400

—

1000

mV

1.8

—

2.2

V

Conditions

—

VCC=3.3V

Table 8: Data output levels (differential PECL)

Parameter

Description

Min

Typ

Max

VOD

VOCM

Output differential voltage

Output common-mode voltage

600

—

1000

1.8

—

2.2

note 1: Nominal PECL mode, VCC=VCCP=3.3V, VEE=0, terminated 50ohms to +2.0V

Units

mV

V

Conditions

note 1

note 1

G52270-0, Rev. 4.1

7/24/00

© VITESSE SEMICONDUCTOR CORPORATION

741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896

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