VSC8150 查看數據表（PDF） - Vitesse Semiconductor
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VSC8150 Datasheet PDF : 20 Pages
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2.488Gb/s SONET/SDH
Overhead Monitor
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC8150
DC Characteristics
Table 10: High-Speed Differential ECL Inputs and Outputs (HSECL)
Parameter
Description
Min Typ
Max
VOD
Output differential voltage
(Peak to Peak, Single-ended)
550
-
1200
VOCM
Trf
RO
VID
Output common-mode
voltage
Output Rise / Fall
Output Impedance
Input differential voltage
2100
-
-
100
40
-
200
-
Note: HSECL inputs are NOT terminated on chip (high impedance inputs).
3000
-
60
Units
mV
mV
ps
ohms
mV
Conditions
Load = 100 Ohms
across RXSLBOUT+/–
at receiver
Load = 100 Ohms
across RXSLBOUT+/–
at receiver
—
—
AC Coupled, internally
biased to VCC/2
Table 11: TTL Inputs and Outputs
Parameter
Description
VOH
VOL
Output HIGH voltage
Output LOW voltage
VIH
Input HIGH voltage
VIL
Input LOW voltage
IIH
Input HIGH current
IIL
Input LOW current
Min Typ
Max Units Conditions
2.4
-
-
V
IOH = -8mA
0
-
0.4
V
IOL = 8mA
2.0
-
VCC +
1.0V
V—
0
-
0.8
V—
-
-
-50
-
500
uA VIN = 2.4V
-
uA VIN = 0.4V
Table 12: Power Supply Currents (VMM = VCC = +3.3V, Outputs Open)
Parameter
ITTL
PD
Description
Power supply current from VCC
Power dissipation
(Max)
850
2.95
Units
mA
W
Table 13: Power Supply Currents (VMM = +2.0V, VCC = +3.3V, Outputs Open)
Parameter
ITTL
IMM
PD
Description
Power supply current from VCC
Power supply current from VMM
Power dissipation
(Max)
420
430
2.35
Units
mA
mA
W
Page 12
© VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52186-0, Rev. 3.0
10/12/98
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