ZXM62N03GTA 查看數據表（PDF） - Diodes Incorporated.
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ZXM62N03GTA Datasheet PDF : 7 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (VGS=10V; TA = +25°C) (Note 6)
(VGS=10V; TA = +70°C) (Note 6)
(VGS=10V; TA = +25°C) (Note 5)
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
Value
30
±20
4.7
3.8
3.4
16
2.6
16
ZXM62N03G
Unit
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at TA = +25°C (Note 5)
Linear Derating Factor
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
2.0
16
3.9
31
62.5
32
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS
IDSS
-
-
1
µA VDS = 30V, VGS = 0V
IGSS
-
-
100
nA VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
1
-
-
V VDS = VGS, ID =250µA
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)
Diode Forward Voltage (Note 8)
RDS(ON)
-
gfs
1.1
VSD
-
-
-
0.11
0.15
Ω VGS = 10V, ID = 2.2A
VGS = 4.5V, ID =1.1A
-
-
S VDS = 15V, ID = 1.1A
-
0.95
V
TJ= +25°C, IS=2.2A,
VGS=0V
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Ciss
Coss
Crss
tD(ON)
tR
tD(OFF)
tF
Qg
-
380
-
-
90
-
-
30
-
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
-
2.9
-
ns
-
5.6
-
-
11.7
-
ns VDD = 15V, ID = 2.2A, VGS = 10V,
ns RGS =6Ω
-
6.4
-
ns
-
-
9.6
nC
Gate-Source Charge (Note 9)
Qgs
-
-
1.7
nC VDS=24V,VGS=10V, ID=2.2A
Gate-Drain Charge (Note 9)
Qgd
-
-
2.8
nC
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
-
18.8
-
-
11.4
-
ns
nC
TJ=25°C, IF=2.2A, di/dt= 100A/µs
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t≦10 seconds.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
8. Measured under pulsed conditions. Width300µs. Duty cycle ≦2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXM62N03G
Document number: DS33481 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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