MX29LV320E 查看數據表（PDF） - Macronix International
零件编号
产品描述 (功能)
生产厂家
MX29LV320E Datasheet PDF : 68 Pages
| |||
MX29LV320E T/B
COMMAND OPERATIONS (cont'd)
AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY
The MX29LV320E T/B provides the user the ability to program the memory array in Byte mode or Word mode. As
long as the users enters the correct cycle defined in the Table 3 (including 2 unlock cycles and the A0H program
command), any byte or word data provided on the data lines by the system will automatically be programmed
into the array at the specified location.
After the program command sequence has been executed, the internal write state machine (WSM) automatically
executes the algorithms and timings necessary for programming and verification, which includes generating suit-
able program pulses, checking cell threshold voltage margins, and repeating the program pulse if any cells do
not pass verification or have low margins. The internal controller protects cells that do pass verification and mar-
gin tests from being over-programmed by inhibiting further program pulses to these passing cells as weaker cells
continue to be programmed.
With the internal WSM automatically controlling the programming process, the user only needs to enter the pro-
gram command and data once.
Programming will only change the bit status from "1" to "0". It is not possible to change the bit status from "0" to
"1" by programming. This can only be done by an erase operation. Furthermore, the internal write verification
only checks and detects errors in cases where a "1" is not successfully programmed to "0".
Any commands written to the device during programming will be ignored except hardware reset, which will termi-
nate the program operation after a period of time no more than Tready1. When the embedded program algorithm
is complete or the program operation is terminated by a hardware reset, the device will return to Read mode.
The typical chip program time at room temperature of the MX29LV320E T/B is less than 36 seconds.
After the embedded program operation has begun, the user can check for completion by reading the following
bits in the status register:
Status
In progress
Finished
Exceed time limit
Q7*1
Q6*1
Q5
Q7#
Toggling
0
Q7
Stop toggling
0
Q7#
Toggling
1
RY/BY# *2
0
1
0
*1: When an attempt is made to program a protected sector, the program operation will abort thus preventing any
data changes in the protected sector. Q7 will output complement data and Q6 will toggle (briefly 1us or less) be-
fore aborting and returning the device to Read mode.
*2: RY/BY# is an open drain output pin and should be connected to VCC through a high value pull-up resistor.
ERASING THE MEMORY ARRAY
There are two types of erase operations performed on the memory array -- Sector Erase and Chip Erase. In the
Sector Erase operation, one or more selected sectors may be erased simultaneously. In the Chip Erase opera-
tion, the complete memory array is erased except for any protected sectors.
P/N:PM1575
REV. 1.3, DEC. 19, 2013
23
Share Link: 