UMF9NTR 查看數據表（PDF） - ROHM Semiconductor
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UMF9NTR Datasheet PDF : 6 Pages
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Transistors
!Absolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
15
12
6
500
1.0
150(TOTAL)
150
−55~+150
V
V
V
mA
A ∗1
mW ∗2
°C
°C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous ID
Pulsed
IDP
Reverse drain
current
Continuous IDR
Pulsed
IDRP
Total power dissipation
PD
Channel temperature
Tch
Range of storage temperature Tstg
Limits
30
±20
100
200
100
200
150(TOTAL)
150
−55~+150
Unit
V
V
mA
mA ∗1
mA
mA ∗1
mW ∗2
°C
°C
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
UMF9N
!Electrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Transition frequency
fT
Collector output capacitance
Cob
Min. Typ. Max. Unit
Conditions
12
−
−
V IC=1mA
15
−
−
V IC=10µA
6
−
−
V IE=10µA
−
−
100
nA VCB=15V
−
−
100
nA VEB=6V
−
100 250 mV IC=200mA, IB=10mA
270
−
680
− VCE=2V, IC=10mA
−
320
−
MHz VCE=2V, IE=−10mA, f=100MHz
−
7.5
−
pF VCB=10V, IE=0mA, f=1MHz
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min. Typ. Max. Unit
Conditions
−
−
±1
µA VGS=±20V, VDS=0V
30
−
−
V ID=10µA, VGS=0V
−
−
1.0
µA VDS=30V, VGS=0V
0.8
−
1.5
V VDS=3V, ID=100µA
−
5
8
Ω ID=10mA, VGS=4V
−
7
13
Ω ID=1mA, VGS=2.5V
20
−
−
ms VDS=3V, ID=10mA
−
13
−
pF
−
9
−
pF VDS=5V, VGS=0V, f=1MHz
−
4
−
pF
−
15
−
ns
−
35
−
ns ID=10mA, VDD 5V,
VGS=5V, RL=500Ω,
−
80
−
ns RGS=10Ω
−
80
−
ns
2/5
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