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VS-40EPS12-M3(2021) 查看數據表(PDF) - Vishay Semiconductors

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产品描述 (功能)
生产厂家
VS-40EPS12-M3
(Rev.:2021)
Vishay
Vishay Semiconductors Vishay
VS-40EPS12-M3 Datasheet PDF : 5 Pages
1 2 3 4 5
www.vishay.com
VS-40EPS..-M3 Series
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 40 A
1
3
TO-247AC 2L
Base
cathode
2
1
Cathode
3
Anode
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
IFSM
TJ max.
Package
40 A
800 V to 1200 V
1.1 V
475 A
150 °C
TO-247AC 2L
Circuit configuration
Single
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
IFSM
VF
Range
40 A, TJ = 25 °C
TJ
VALUES
40
800/1200
475
1.1
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-40EPS08-M3
VS-40EPS12-M3
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
40
400
475
800
1131
11 310
UNITS
A
A2s
A2s
Revision: 09-Feb-2021
1
Document Number: 94343
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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