VS-40EPS08-M3 查看數據表（PDF） - Vishay Semiconductors
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VS-40EPS08-M3 Datasheet PDF : 6 Pages
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VS-40EPS..PbF Series, VS-40EPS..-M3 Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
40 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.0
1.1
7.16
0.74
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storrage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
DC operation
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC modified (JEDEC)
VALUES
-40 to +150
UNITS
°C
0.6
40
°C/W
0.2
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
40EPS08
40EPS12
150
145
140
135
130
125
120
115
110
105
100
95
0
VS-40EPS.. Series
RthJC (DC) = 0.6 K/W
Ø
Conduction angle
30°
60°
90°
120°
180°
5 10 15 20 25 30 35 40 45
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
VS-40EPS.. Series
RthJC (DC) = 0.6 K/W
140
130
Ø
Conduction period
120
110
100
0
30°
60°
90°
120°
180°
DC
10 20 30 40 50 60 70
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 12-Oct-16
2
Document Number: 94343
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