STP24N60DM2 查看數據表（PDF） - STMicroelectronics

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STP24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB24N60DM2, STP24N60DM2, STW24N60DM2

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

(1)

ISD

Source-drain current

-

(2)

ISDM Source-drain current (pulsed)

-

(3)

VSD Forward on voltage

ISD = 18 A, VGS = 0

-

18 A

72 A

1.6 V

trr Reverse recovery time

- 155

ns

ISD = 18 A, di/dt = 100 A/μs

Qrr Reverse recovery charge

VDD = 60 V (see Figure 18)

-

956

nC

IRRM Reverse recovery current

- 12.5

A

trr Reverse recovery time

- 200

ISD = 18 A, di/dt = 100 A/μs

ns

Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C

- 1450

nC

IRRM Reverse recovery current

(see Figure 18)

- 13

A

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

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