DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MCP6N16T-100E 查看數據表(PDF) - Microchip Technology

零件编号
产品描述 (功能)
生产厂家
MCP6N16T-100E
Microchip
Microchip Technology Microchip
MCP6N16T-100E Datasheet PDF : 58 Pages
First Prev 31 32 33 34 35 36 37 38 39 40 Next Last
MCP6N16
The nonlinearity specifications (INLCM and INLDM)
describe errors that are nonlinear functions of VCM and
VDM, respectively. They give the maximum excursion
from linear response over the entire common mode
and differential ranges.
The input bias current and offset current specifications
(IB and IOS), together with a circuit’s external input
resistances, give an additional DC error. Figure 4-3
shows the resistors that set the DC bias point.
IBP RIP
VIP
VIM
IBM RIM
VDD
U1
MCP6N16
VOUT
IBF
RF
VFG
RR
IBR
RG
VREF
FIGURE 4-3:
DC Bias Resistors.
The resistors at the main input (RIP and RIM) and its
input bias currents (IBP and IBM) give the following
changes in the INA’s bias voltages:
EQUATION 4-6:
VIP = IBPRIP = IB + IOS 2RIP
VIM = IBMRIM = IB IOS 2RIM
VCM = VIP + VIM2
= IBRIP + RIM2IOSRIP RIM4
VDM = VIP VIM
= IBRIP RIMIOSRIP + RIM2
VOUT = GDMVDM + VCM CMRR
Where:
CMRR is in units of V/V
The change in VCM (VCM) can affect the input range,
for large RIP or RIM. The best design results when RIP
and RIM are equal and small:
EQUATION 4-7:
VOUT GDMVDM
GDM2IBRTOL IOSRIP
Where:
RIP = RIM
RTOL = tolerance of RIP and RIM
The resistors at the feedback input (RR, RF and RG)
and its input bias currents (IBR and IBF) give the
following changes in the INA’s bias voltages:
EQUATION 4-8:
VREF = IBRRR = IB2 + IOS2 2RR
VFG  VREFdue to high AOL
VOUT IB2RF GDMRR+ IOS2RF + GDMRR2
Where:
IIIIBOBO22SS22mmeIBeIe,OtesiSnts,tghitneehnegIeBeIrOnsaeSpl resacplieficcaifitcioantion
The change in VREF (VREF) can affect the input range,
for large RR or RF. The best design results when
GDMRR and RF are equal (i.e., RR = RF||RG) and small:
EQUATION 4-9:
VOUT  2IB2RTOL + IOS2RF
Where:
GDMRR = RF
RTOL = tolerance of RR, RF and RG
4.1.4 AC PERFORMANCE
The bandwidth of these amplifiers depends on GDM
and GMIN:
EQUATION 4-10:
fBW fGBWP GDM
0.50 MHzGMIN GDM,
0.35 MHzGMIN GDM,
Where:
GMIN = 1, 10
GMIN = 100
fBW = -3 dB bandwidth
fGBWP = Gain-Bandwidth product
The bandwidth at the maximum output swing is called
the Full Power Bandwidth (fFPBW). It is limited by the
Slew Rate (SR) for many amplifiers, but is close to fBW
for these parts:
EQUATION 4-11:
Where:
fFPBW SR VO
fBW , for these parts
VO = Maximum output voltage swing
VOH – VOL
DS20005318A-page 38
2014 Microchip Technology Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]