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零件编号
产品描述 (功能)
025N06N 查看數據表(PDF) - Unspecified
零件编号
产品描述 (功能)
生产厂家
025N06N
OptiMOS Power-Transistor
Unspecified
025N06N Datasheet PDF : 10 Pages
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13 Avalanche characteristics
I
AS
=f(
t
AV
);
R
GS
=25
W
parameter:
T
j(start)
100
100 °C
25 °C
125 °C
10
14 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=90A pulsed
parameter:
V
DD
12
10
8
6
IPD025N06N
12 V
30 V
48 V
4
1
1
10
100
t
AV
[µs]
15 Drain-source breakdown voltage
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
2
1000
0
0 10 20 30 40 50 60 70 80
Q
gate
[nC]
16 Gate charge waveforms
66
V
GS
64
Q
g
62
60
V
gs(th)
58
56
54
-60 -20 20
60 100 140 180
T
j
[
°
C]
Q
g(th)
Q
gs
Rev.2.3
page 7
Q
sw
Q
gd
Q
gate
2012-12-20
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