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MAL215097001E3(2008) 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
MAL215097001E3
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
MAL215097001E3 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
150 CRZ
Vishay BCcomponents
Aluminum Capacitors
SMD (Chip), Very Low Z
ADDITIONAL ELECTRICAL DATA
PARAMETER
CONDITIONS
VALUE
Voltage
Surge voltage for short periods
Reverse voltage for short periods
Current
IEC 60384-18, subclause 4.14
IEC 60384-18, subclause 4.16
Us 1.15 x UR
Urev 1 V
Leakage current
After 2 minutes at UR
IL2 0.01 x CR x UR
Inductance
Ø D = 8 mm
typ. 6 nH
Equivalent series inductance (ESL)
Ø D = 10 mm
typ. 8 nH
Ø D 12.5 mm
typ. 11 nH
Resistance
Equivalent series resistance (ESR) at 100 Hz
Calculated from tan δmax. and CR (see Table 5) ESR = tan δ/2 π f CR
CAPACITANCE
1.2
C
C0
1
1.1
2
1.0
2
0.9
1
Curve 1: 10 V
Curve 2: 63 V
0.8
- 60 - 40 - 20 0
20 40 60 80 100
Tamb (°C)
Fig.5 Typical multiplier of capacitance C as a function of
temperature at 100 Hz
C0 = typical capacitance C at 20 °C, 100 Hz
1.2
C
C0
1.0
2
0.8
0.6
Curve 1: 10 V
Curve 2: 63 V
0.4
101
102
103
1
104
105
f (Hz)
Fig.6 Typical multiplier of capacitance as a function of
frequency at 20 °C
C0 = typical capacitance at 20 °C, 100 Hz
www.vishay.com
62
For technical questions, contact: aluminumcaps1@vishay.com
Document Number: 28395
Revision: 30-Oct-08

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