SPD08P06PG(2008) 查看數據表（PDF） - Infineon Technologies
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SPD08P06PG Datasheet PDF : 9 Pages
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SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
SPD08P06P G
Product Summary
V DS
R DS(on),max
ID
-60 V
0.3 Ω
-8.8 A
PG-TO252-3
Type
Package
SPD08P06PG PG-TO252-3
Tape and reel information
1000 pcs / reel
Marking Lead free
08P06P Yes
Packing
Non dry
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=100 °C
T A=25 °C
Avalanche energy, single pulse
E AS
I D=8.83 A, R GS=25 Ω
Avalanche energy, periodic limited by
Tjmax
E AR
Reverse diode dv /dt
dv /dt
I D=8.83 A, V DS=48 V,
di /dt =-200 A/µs,
T j,max=175 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V GS
P tot
T A=25 °C
T j, T stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
steady state
-8.83
-6.25
-35.32
70
4.2
-6
±20
42
"-55 ... +175"
260 °C
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.9
page 1
2008-10-13
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