GSD2004WS 查看數據表（PDF） - Vishay Semiconductors
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GSD2004WS Datasheet PDF : 5 Pages
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GSD2004WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Reverse breakdown voltage
IR = 100 μA
VBR
300
Leakage current
VR = 240 V
IR
VR = 240 V, Tj = 150 °C
IR
Forward voltage
IF = 20 mA
VF
IF = 100 mA
VF
0.83
Diode capacitance
VF = VR = 0, f = 1 MHz
CD
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA,
RL = 100
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
250
100
Tj = 100 °C
200
MAX.
100
100
0.87
1
5
50
UNIT
V
nA
μA
V
V
pF
ns
10
25 °C
1
0.1
0.01
0
18858
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
0.3
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
1000
0.2
DC current IF
Current (rectif.) IO
0.1
0
0
18859
30
60
90
120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
100
10
1
0.1
0
18862_4
Reverse Voltage
GSD2004WS VR = 240 V
40 80 120 160 200
Tj - Junction Temperature (°C)
Fig. 4 - Leakage Current vs. Junction Temperature
Rev. 1.8, 13-Nov-13
2
Document Number: 85730
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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