2N6427 查看數據表（PDF） - Philips Electronics
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2N6427 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistor
Product specification
2N6427
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10000).
APPLICATIONS
• General purpose
• High gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage
1
2
3
2
1
TR1
TR2
MAM252
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCES
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
VBE = 0
Tamb ≤ 25 °C
IC = 10 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
−
−
−
−
10 000
125
MAX.
40
30
500
625
100 000
−
UNIT
V
V
mA
mW
MHz
1997 Jul 04
2
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