MP03/300-10 查看數據表（PDF） - Dynex Semiconductor
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MP03/300-10 Datasheet PDF : 10 Pages
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MP03 XXX 300 Series
SURGE RATINGS - PER ARM
Symbol
IFSM
I2t
Parameter
Conditions
Surge (non-repetitive) on-state current
10ms half sine; VR = 0
T = 125˚C
j
V = 50% V
R
RRM
I2t for fusing
V =0
10ms half sine; R
Tj = 125˚C
V = 50% V
R
RRM
Max.
Units
10.6 kA
8.5
kA
0.56 x 106 A2s
0.36 x 106 A2s
THERMAL & MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-hs)
Tvj
Tstg
V
isol
Parameter
Conditions
dc
Thermal resistance - junction to case
per Thyristor or Diode
halfwave
3 phase
Thermal resistance - case to heatsink
per thyristor or diode
Virtual junction temperature
Mounting torque = 5Nm
with mounting compound
Off-state (Blocking)
Storage temperature range
Isolation voltage
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
0.11
0.12
0.13
Units
oC/W
oC/W
oC/W
0.05 oC/W
125
oC
-40 to 125 oC
2.5
kV
DYNAMIC CHARACTERISTICS- THYRISTOR
Symbol
Parameter
Conditions
Max.
Units
VTM
On-state voltage
At 1000A, T = 25oC - See Note 1
case
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tj = 125oC
dV/dt Linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC
dI/dt Rate of rise of on-state current
From 67% VDRM to 600A
Gate source 10V, 5Ω
Rise time 0.5µs, Tj =125oC
V
Threshold voltage
T(TO)
At T = 125oC - See Note 1
vj
rT
On-state slope resistance
At Tvj = 125oC - See Note 1
* Higher dV/dt values available, contact factory for particular requirements.
1.50
30
200*
V
mA
V/µs
100 A/µs
0.8
V
0.7 mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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