2SB1188 查看數據表（PDF） - Weitron Technology

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产品描述 (功能)

生产厂家

2SB1188

Epitaxial Planar PNP Transistors

Weitron Technology 

2SB1188

T a =25 C

-1

-0.5

IC /IB =10

-0.2

-0.1

-0.05

--5 -10 -20 -50 -100 -200 -500 -1000 -2000

C O L L E T O R C UR R E NT : IC (mA)

F IG .7 B as e-emitter s aturation voltage

vs . collector current

300

200

100

50

20

10

C ib

C ob

T a =25 C

f =1MHz

IE =0A

IC =0A

-0.5 -1 -2

-5 -10 -20 -30

C OLLE C TOR TO BAS E VOLTAG E : VCB (V)

E MIT T E R T O B AS E V OLT AG E

: VEB (V)

F IG .9 C ollector output capacitance vs .

collector-bas e voltage

E mitter input capacitance vs .

emitter-bas e voltage

500

T a =25 C

V C E =-5V

200

100

50

5 10 20 50 100 200 500 1000 2000

E MIT T E R C UR R E NT : IE (mA)

F IG .8 G ain bandwidth product vs .

emitter current

-5

IC Max. (puls e)

-2

-1

P

W =100ms*

-0.5

-0.2

DC

-0.1

-0.05

T a =25 C

*S ingle

-0.02 nonrepetitive

-0.01 puls e

-0.1 -0.2 -0.5 -1 -2

-5 -10 -20 -50

C OLLE C TOR TO E MITTE R VOLTAG E : VCE (V)

F IG .10 S afe operation area

WEITRON

http://www.weitron.com.tw

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