2SC3468 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
2SC3468 Datasheet PDF : 5 Pages
| |||
2SC3468
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-to-Base Voltage
VCBO
300
V
Collector-to-Emitter Voltage
VCEO
300
V
Emitter-to-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Collector Dissipation
PC
1.0
W
Junction Temperature
TJ
0 ~ +125
°C
Storage Temperature
TSTG
-65 ~ +125
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature
range and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
CLASSIFICATION of hFE
RANK
RANGE
C
40 ~ 80
SYMBOL
ICBO
IEBO
hFE
fT
VCE (sat)
VBE (sat)
V(BR) CBO
V(BR) CEO
V(BR) EBO
Cob
Cre
TEST CONDITIONS
VCB = 200V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 10mA
VCE = 30V, IC = 10mA
IC = 20mA, IB = 2mA
IC = 20mA, IB = 2mA
IC = 10µA, IE = 0
IC = 1mA, RBE = ∞
IE = 10µA, IC = 0
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
MIN TYP MAX UNIT
0.1 µA
0.1 µA
40
320
150
MHz
0.6 V
1.0 V
300
V
300
V
5
V
2.6
pF
1.8
pF
D
60 ~ 120
E
100 ~ 200
F
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-037.B
Share Link: 