2SK1151 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SK1151

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1151(L)(S), 2SK1152(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK1151

2SK1152

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

1.5

A

6

A

1.5

A

20

W

150

°C

–55 to +150

°C

2

Share Link: