2SK1618 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK1618

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1618(L), 2SK1618(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

V(BR)DSS

600

—

voltage

Gate to source breakdown

voltage

V(BR)GSS

±30

—

Gate to source leak current IGSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off) 2.0

—

Static Drain to source on state RDS(on) —

3.8

resistance

Forward transfer admittance |yfs|

1.2

2.0

Input capacitance

Ciss —

295

Output capacitance

Coss —

70

Reverse transfer capacitance Crss —

12

Turn-on delay time

td(on)

—

8

Rise time

tr

—

25

Turn-off delay time

td(off)

—

65

Fall time

tf

—

30

Body to drain diode forward VDF

—

0.9

voltage

Body to drain diode reverse trr

recovery time

—

220

Note 1. Pulse test

Max

—

—

±10

250

3.0

5.0

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 500 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 1 A, VGS = 10 V *1

ID = 1 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 1 A, VGS = 10 V,

RL = 30 Ω

IF = 2 A, VGS = 0

IF = 2 A, VGS = 0,

diF/dt = 100 A/µs

See characteristic curves of 2SK1572.

3

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