APTM100DA18T 查看數據表（PDF） - Advanced Power Technology
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APTM100DA18T Datasheet PDF : 6 Pages
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APTM100DA18T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
3
VGS = ±30 V, VDS = 0V
500 µA
2000
180 215 mΩ
5V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Eon Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 43A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5Ω
Min Typ Max Unit
10.4
1.76
nF
0.32
372
48
nC
244
18
12
ns
155
40
1800
µJ
1246
2846
µJ
1558
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
IF(A V)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 60A
IF = 120A
IF = 60A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 60A
VR = 667V
di/dt = 200A/µs
IF = 60A
VR = 667V
di/dt = 200A/µs
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
Tc = 100°C
Tj = 125°C
60
A
1.9 2.5
2.2
V
1.7
Tj = 25°C
280
ns
Tj = 125°C
350
Tj = 25°C
760
nC
Tj = 125°C
3600
APT website – http://www.advancedpower.com
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