BCW68GLT1 查看數據表（PDF） - Willas Electronic Corp.
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BCW68GLT1 Datasheet PDF : 3 Pages
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WILLAS FM120-M+
1.0GA SeUnRFeACraE Ml POUuNTrpSCoHOsTeTKTYrBaAnRRsIEiRsRtEoCrTsIFIERS
-20V-
BCW68GLT1THRU
200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ELEC• TLRowICpAroLfiCleHsAuRrfaAcCeTmEoRuInStTeIdCaSpp(TliAc=at2io5n°Cinuonlredsesrototherwise noted) (Continued)
optimize board space.
• Low power loss,Chhiagrhacetfefricisietinccy.
Symbol
Min
Typ
ON C•HHAigRhAcCurTreEnRt IcSaTpIaCbSility, low forward voltage drop.
SOD-123H
0.1M46a(3x.7)
0.130(3.3)
Unit
0.012(0.3) Typ.
• HDigChCsuurrrgeentcGaapianbility.
hFE
—
• G(uIaC=rd–r1in0gmfAordco,vVeCrEvo=lt–a1g.0e Vpdroct)ection.
120
—
400
• U(ltIrCa= h–i1g0h0-smpAedecd, VswCEit=ch–i1n.0g.Vdc )
• S(ilIiCc=on–3e0p0itmaxAidacl ,pVlaCEna=r–c1h.0ipV, dmce)tal silicon junction.
• LCeaodlle-cfrteore–pEamrittstemr SeaettuerantivoinroVnomltaegnetal standards of
MIL-STD-19500 /228
• R(oIHCS= p–ro3d0u0cmt fAodr cp,aIcBk=in–g3c0omdeAdsucf)fix "G"
V CE(sat)
HBaalosgee–nEfmreiteteprrSoadtuucrtaftoiornpVaockltianggecode suffix "H"
Me( ICc=h–a5n00imcAadlc,dIBa=t–a50 mAdc )
V BE(sat)
SMS•MEApLoxLy–S: UIGL9N4A-VL0CrHatAedRfAlaCmTeErReItSarTdIaCnSt
Current–Gain — Bandwidth Product
fT
• Case : Molded plastic, SOD-123H
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
,
• TeOrumtpiuntaClsa:pPalcaittaendceterminals, solderable per MIL-STD-750
(V CB = – 10MVedthco, IdE2=002,6f = 1.0 MHz)
C obo
160
—
60
—
—
—
—
—
100
—
0.031(0.8) Typ.
—
—
—
—
– 1.5
– 2.0
—
18
0.071(1.8)
0.056(1.4)
Vdc
Vdc
0.040(1.0)
0.024(0.6)
MHz
0.031(0.8) Typ.
pF
• PIonlpaurtitCya:pIancditiacnacted by cathode band
• M(oVuEnB t=in–g0.P5oVsditcio, InC:=An0,yf = 1.0 MHz)
C ibo
Dimensions in inches and (millimeters)
—
—
105
pF
•
Noise Figure
Weight : Approximated
0.011
gram
NF
(V CE= – 5.0 Vdc, I C = – 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
—
—
10
dB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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