BF 660
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 20 V, IE = 0
DC current gain
IC = 3 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = 0 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR) CE0 30
–
V(BR) CB0 40
–
V(BR) EB0 4
–
ICB0
–
–
hFE
30
–
–
V
–
–
50 nA
–
–
fT
–
700 –
MHz
Ccb
–
0.6 –
pF
Cce
–
0.28 –
Semiconductor Group
2