BFY90 查看數據表（PDF） - Advanced Power Technology

零件编号

产品描述 (功能)

生产厂家

BFY90

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology  

BFY90

FUNCTIONAL

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

G

U max

Maximum Unilateral Gain (1) IC = 8 mAdc, VCE = 10 Vdc,

f = 200 MHz

-

20

-

dB

MSG

Maximum Stable Gain

IC = 8 mAdc, VCE = 10 Vdc,

f = 200 MHz

-

22

-

dB

|S21|2

Insertion Gain

IC = 8 mAdc, VCE = 10 Vdc,

f = 200 MHz

15

16

-

dB

Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA

f

(MHz)

100

200

300

400

500

600

700

800

900

1000

S11

|S11|

∠φ

.574

-79

.374

-130

.292

-172

.259

142

.221

96

.198

53

.185

8.8

.187

-38

.185

-91

.177

-136

S21

|S21|

∠φ

10.65

127

7.01

105

4.44

97

3.62

92

3.02

88

2.57

80

2.08

76

1.90

76

1.79

72

1.70

61

S12

|S12|

∠φ

.023

67

.036

60

.047

66

.063

63

.072

60

.082

58

.087

58

.104

58

.117

50

.118

44

S22

|S22|

.788

.682

.654

.640

.617

.614

.611

.621

.620

.632

∠φ

-56

-97

-136

-178

140

98

55

10

-35

-78

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Share Link: