Q67000-S306 查看數據表（PDF） - Siemens AG
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Q67000-S306 Datasheet PDF : 9 Pages
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BSP 123
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.9
Ptot = 2W
A
l kj i h
ID
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
2
4
6
g VGS [V]
a 2.0
b 2.5
c 3.0
d 3.5
fe
4.0
f
4.5
g 5.0
e h 6.0
i
7.0
j
8.0
k 9.0
d
l 10.0
c
b
a
8 V 11
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
19
Ωa
bc
d
e
f
16
RDS (on)
14
12
10
8
6
g
h
4
ki j
2
VGS [V] =
ab
c
d
e
f
ghi
j
k
2.05 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
1.0
A
ID
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Semiconductor Group
6
0.40
S
gfs
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8
ID
Sep-12-1996
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