BTA16 B / BTB16 B
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Parameter
Value
60
Rth (j-c) DC Junction to case for DC
BTA
2.9
BTB
2.3
Rth (j-c) AC Junction to case for 360° conduction angle
BTA
2.2
( F= 50 Hz)
BTB
1.75
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
VGM = 16V (tp = 20 µs).
Symbol
Test Conditions
IGT
VD=12V (DC) RL=33Ω
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 22.5A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Quadrant
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-II-III-IV
MAX
MAX
MAX
MIN
TYP
Suffix
B
50
100
1.5
0.2
2
Tj=25°C
I-III-IV
TYP
40
II
70
Tj=25°C
MAX
50
Tj=25°C
MAX
1.6
Tj=25°C
MAX
0.01
Tj=125°C
MAX
2
Tj=125°C
MIN
250
(dV/dt)c * (dI/dt)c = 7A/ms
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
10
Unit
°C/W
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
V/µs
2/5