BTS550P 查看數據表（PDF） - Infineon Technologies
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BTS550P Datasheet PDF : 15 Pages
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Inverse load current operation
Vbb
+
-
VIN
Vbb
- IL
IN PROFET OUT
IS
IIS
VIS
R IS
VOUT +
-
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense
feature is not available during this kind of operation
(IIS = 0). With IIN = 0 (e.g. input open) only the intrin-
sic drain source diode is conducting resulting in
considerably increased power dissipation. If the
device is switched on (VIN = 0), this power
dissipation is decreased to the much lower value
RON(INV) * I2 (specifications see page 4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
E bb
E AS
V bb
V bb
i L(t)
IN PROFET OUT
IS
L
I IN
RIS
{Z L RL
ELoad
EL
ER
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Data Sheet BTS550P
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [µH]
100000
10000
1000
100
10
1
1
10
100
1000
Externally adjustable current limit
IL [A]
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of
T2 is reached by IS*RIS . After a delay time defined
by RV*CV T1 will be reset. The device is turned on
again, the short circuit current is defined by IL(SC)
and the device is shut down after td(SC) with latch
function.
Vbb
IN
Vbb
PROFET OUT
RV
IN
Signal
T1
Signal
GND
CV
T2
IS
R IS
Rload
Power
GND
Infineon Technologies AG
10
2003-Oct-01
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