BTS550P 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

BTS550P

Smart Highside High Current Power Switch

Infineon Technologies 

Parameter and Conditions

at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified

Symbol

Data Sheet BTS550P

Values

Unit

min typ max

Inverse Load Current Operation

On-state resistance (Pins 1,5 to pin 3)

VbIN = 12 V, IL = - 20 A

Tj = 25 °C:

see diagram on page 10

Tj = 150 °C:

Nominal inverse load current (Pins 1,5 to Tab)

VON = -0.5 V, Tc = 85 °C10

Drain-source diode voltage (Vout > Vbb)

IL = - 20 A, IIN = 0, Tj = +150°C

RON(inv)

IL(inv)

-VON

Operating Parameters

Operating voltage (VIN = 0) 8, 12)

Undervoltage shutdown 13)

Undervoltage start of charge pump

see diagram page 14

Overvoltage protection14)

Ibb = 15 mA

Tj =-40°C:

Tj = 25...+150°C:

Standby current

IIN = 0

Tj =-40...+25°C:

Tj = 150°C:

Vbb(on)

VbIN(u)

VbIN(ucp)

VbIN(Z)

Ibb(off)

-- 2.8

5.0

90 115

3.6 mΩ

6.5

-- A

-- 0.6 0.7 V

5.0

-- 34 V

1.5 3.0 4.5 V

3.0 4.5 6.0 V

60

--

-- V

62 64

--

-- 15 25 µA

-- 25 50

12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).

For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit.

13) VbIN = Vbb - VIN see diagram on page 8. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V

(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.

14) See also VON(CL) in circuit diagram on page 9.

Infineon Technologies AG

4

2003-Oct-01

Share Link: