BTS550P 查看數據表（PDF） - Infineon Technologies

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BTS550P

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS550P

Terms

VbIN

I bb

3

Vbb

IL

Vbb

IN

OUT

2

PROFET

1,5

RIN

IS

V

IN

VbIS

4 I IS

I IN

DS

VIS

R IS

VON

VOUT

Two or more devices can easily be connected in

parallel to increase load current capability.

RON measurement layout

≤ 5.5 mm

Vbb force contacts

Out Force Sense

contacts contacts

(both out

pins parallel)

Current sense status output

Vbb

R bb

ZD

IIS

V

Z,IS

IS

VIS

R

IS

VZ,IS = 64 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if

n devices are connected in parallel). IS = IL/kilis can

be driven only by the internal circuit as long as Vout -

VIS > 5 V. If you want to measure load currents up

to

IL(M),

RIS

should

be

less

than

Vbb -

IL(M) /

5V

Kilis.

Note: For large values of RIS the voltage VIS can

reach almost Vbb. See also overvoltage protection.

If you don't use the current sense output in your

application, you can leave it open.

Short circuit detection

Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)

(80 ...350 µs).

+ Vbb

VON

Input circuit (ESD protection)

V bb

Logic

unit

Short circuit

detection

OUT

V

ZD

Z,IN

V bIN

IN

IIN

R bb

Inductive and overvoltage output clamp

+ Vbb

VZ1

VON

V IN

When the device is switched off (IIN = 0) the

voltage between IN and GND reaches almost Vbb.

Use a mechanical switch, a bipolar or MOS

transistor with appropriate breakdown voltage as

driver. VZ,IN = 64 V (typ).

Infineon Technologies AG

8

VZG

IS

DS

OUT

PROFET

VOUT

VON is clamped to VON(Cl) = 42 V typ. At inductive

load switch-off without DS, VOUT is clamped to

2003-Oct-01

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