BUV48 查看數據表（PDF） - Bourns, Inc
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BUV48 Datasheet PDF : 6 Pages
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
T
BD135
120 Ω
680 µF
100 Ω
V1
47 Ω
100 µF
tp
TUT
15 Ω
V1 100 Ω
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
BD136
82 Ω
680 µF
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = toff
OBSOLETE Figure 1. Resistive-Load Switching Test Circuit
C 90%
90% E
IC
B 10%
10% F
0%
90% D
dIB
dt
≥ 2 A/µs
IB
I B(on)
A 10%
0%
I B(off)
V cc V=CC250 V
Figure 2. Resistive-Load Switching Waveforms
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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