BYV95C 查看數據表（PDF） - Galaxy Semi-Conductor
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BYV95C Datasheet PDF : 2 Pages
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RATINGS AND CHARACTERISTIC CURVES
BYV95A - - - BYV95C
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
SETTIMEBASEFOR50/100 ns /cm
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
2.0
Single Phase
Half Wave 60Hz
Resistive or
1.5
Inductive Load
1.0
0.5
0
25 50
75
100 125 150 175
60
50
40
30
20
10
1
TJ=125
8.3ms Single Half
Sine-Wave
10
100
AMBIENT TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
TJ=25
Pulse Width=300µS
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
NUMBER OF CYCLES AT 60 Hz
FIG.5-- TYPICAL JUNCTION CAPACITANCE
40
20
TJ=25
f=1.0MHz
1
1
4
10
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
Document Number 0261047
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
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