BZX55C3V6 查看數據表（PDF） - Yangzhou yangjie electronic co., Ltd
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BZX55C3V6 Datasheet PDF : 4 Pages
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BZX55C Series
Characteristics (Tj=250C unless otherwise specified)
600
500
400
300
200
100
0
0
40
80
120
160
200
Tamb-Ambient Temperature Temperature (0C)
Figure 1.Total Power Dissipation vs.
Ambient Temperature
1.3
Vzm=Vz/Vz(250C)
1.2
TKvz=10x10-4/K
8x10-4/K
6x10-4/K
1.1
4x10-4/K
2x10-4/K
1.0
0
-2x10-4/K
-4x10-4/K
0.9
0.8
-60
0
60
120
180
240
Tj-Junction Temperature Temperature (0C)
Figure 3.Typical of Working Voltage vs.
Junction Temperature
200
150
VR=2V
Tj=250C
100
50
0
0
5
10
15
20
25
Vz-Z-Voltage (V)
Figure 5.Diode Capacitance vs.Z-Voltage
1000
100
10
Tj=25oC
Iz=5mA
1
0
5
10
15
20
25
Vz-Z-Voltage (V)
Figure 2. Typical Change of Working Voltage
under Operating Conditions at Tamb=25-C
15
10
5
Iz=5mA
0
-5
0
10
20
30
40
50
Vz-Z-Voltage (V)
Figure 4. Temperature Conefficient of Vz vs.
Z-Volltage
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