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BUT92(1997) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
BUT92
(Rev.:1997)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BUT92 Datasheet PDF : 4 Pages
1 2 3 4
BUT92
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER
Collector Cut-off
Current (RBE = 10 )
VCE = VCEV
VCE = VCEV Tc = 100 oC
ICEV Collector Cut-off
Current
VCE = VCEV VBE = -1.5V
VCE = VCEV VBE = -1.5V Tc = 100 oC
IEBO
Emitter Cut-off
Current (IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
VEB = 7 V
IC = 0.2 A L = 25 mH
VEB0
Emitter-Base Voltage IE = 50 mA
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 35 A
IC = 35 A
IB = 3.5 A
IB = 3.5 A Tj = 100 oC
VBE(sat)Base-Emitter
Saturation Voltage
IC = 35 A
IC = 35 A
IB = 3.5 A
IB = 3.5 A Tj = 100 oC
diC/dt
VCE(3µs)
VCE(5µs)
Rated of Rise on-state
Collector Current
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
VCC = 200V IB1 = 5.25 A RC = 0
tp = 3µs
Tj = 100 oC
VCC = 200V
RC = 5.7
IB1 = 5.25 A
Tj = 100 oC
VCC = 200V
RC = 5.7
IB1 = 5.25 A
Tj = 100 oC
Min.
250
7
125
Typ.
0.8
1.25
1.2
1.2
200
3
1.8
Max.
0.4
4
0.2
2
1
1.2
1.9
1.5
1.5
6
3
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
A/µs
V
V
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
ts
Storage Time
tf
Fall Time
tc
Crossover Time
VCC = 200 V
IC = 35 A
VBB = -5 V
RB2 = 0.7
VCEW Maximum Collector
VCC = 50 V
Emitter Voltage
VBB = -5 V
without Snubber
LC = 48 µH
Tj = 125 oC
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
VClamp = 250 V
IB1 = 3.5 A
LC = 0.28 mH
Tj = 100 oC
ICWoff = 52 A
IB1 = 3.5 A
RB2 = 0.7
Min.
250
Typ.
1.4
0.15
0.3
Max.
3
0.4
0.7
Unit
µs
µs
µs
V
2/4

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