FC40SA50FKP 查看數據表（PDF） - Vishay Semiconductors
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FC40SA50FKP Datasheet PDF : 10 Pages
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Power MOSFET, 40 A
VDS
90 %
FC40SA50FKP
Vishay Semiconductors
1.000
10 %
VGS
td(on)
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
0.100
0.010
D = 0.50
0.30
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
J J
1 1
R1R1
Ci= i Ri
Ci i Ri
R2R2
2 2
R3R3 Ri (°C/W)
C 0.161
3 3
0.210
0.147
τi (sec)
0.000759
0.017991
0.06094
Notes:
1. Duty factor D = t1/t2
2. Peak TJ=PDM x ZthJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
3000
2500
2000
TOP
BOTTOM
ID ...
18A
26A
40A
1500
1000
500
0
25
50
75
100
125
150
S tarting TJ, Junction Tem perature (°C)
Fig. 12a - Maximum Avalanche Energy vs. Drain Current
15 V
L
VDS
RG
20 V
tp
D.U.T
IAS
0.01 Ω
Driver
+
- VDD
A
Fig. 12b - Unclamped Inductive Test Circuit
Document Number: 94542 For technical questions within your region, please contact one of the following:
Revision: 12-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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