FMMTL717(1997) 查看數據表（PDF） - Diodes Incorporated.

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FMMTL717
(Rev.:1997)

SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Diodes Incorporated. 

FMMTL717

TYPICAL CHARACTERISTICS

0.5

+25°C

0.4

0.3

0.2

IC/IB=10

IC/IB=20

IC/IB=50

0.1

0

1m

10m

100m

1

10

IC - Collector Current (A)

VCE(sat) v IC

0.5

IC/IB=10

0.4

0.3

-55°C

+25°C

+100°C

+150°C

0.2

0.1

0

1m

10m

100m

1

10

IC - Collector Current (A)

VCE(sat) v IC

800 VCE=2V

400

+100°C

+25°C

-55°C

0

1m

10m

100m

1

10

IC - Collector Current (A)

hFE v IC

VCE=2V

1.6

1.2

0.8

-55°C

+25°C

+100°C

+150°C

0.4

0

1m

10m

100m

1

10

IC - Collector Current (A)

VBE(on) v IC

IC/IB=10

1.2

0.8

0.4

-55°C

+25°C

+100°C

+150°C

0

1m

10m

100m

1

10

IC - Collector Current (A)

VBE(sat) v IC

10

1

100m

DC

1s

100ms

10ms

1ms

100µs

10m

0.1

1

10

100

VCE - Collector Emitter Voltage (V)

Safe Operating Area

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