G30N60C3D 查看數據表（PDF） - Fairchild Semiconductor

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G30N60C3D

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor 

Data Sheet

HGTG30N60C3D

January 2009

File Number 4041.2

63A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

drop varies only moderately between 25oC and 150oC. The

IGBT used is the development type TA49051. The diode

used in anti-parallel with the IGBT is the development type

TA49053.

The IGBT is ideal for many high voltage switching applications

operating at moderate frequencies where low conduction

losses are essential.

Formerly Developmental Type TA49014.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGTG30N60C3D TO-247

G30N60C3D

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• 63A, 600V at TC = 25oC

• Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

E

C

G

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

©2009 Fairchild Semiconductor Corporation

HGTG30N60C3D Rev. B

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