HGTG40N60B3 查看數據表（PDF） - Harris Semiconductor
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HGTG40N60B3 Datasheet PDF : 6 Pages
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HGTG40N60B3
Operating Frequency Information
Handling Precautions for IGBT’s
Operating frequency information for a typical device (Figure
13) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allow-
able dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 13) and the
conduction losses (PC) are approximated by PC = (VCE x
ICE) / 2.
EON and EOFF are defined in the switching waveforms
shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous power loss (ICE x VCE) during turn-
off. All tail losses are included in the calculation of EOFF;
i.e.the collector current equals zero (ICE = 0).
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application proce-
dures, however, IGBT’s are currently being extensively used
in military, industrial and consumer applications, with virtu-
ally no damage problems due to electrostatic discharge.
IGBT’s can be handled safely if the following basic precau-
tions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as †”ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rat-
ing of VGEM. Exceeding the rated VGE can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that leave the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
† Trademark Emerson and Cumming, Inc.
9-8
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