HY27UF084G2M 查看數據表（PDF） - Hynix Semiconductor
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HY27UF084G2M Datasheet PDF : 49 Pages
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HY27UF084G2M Series
4Gbit (512Mx8bit) NAND Flash
Parameter
Symbol
Test Conditions
3.3Volt
Min
Typ
Operating
Sequential
Read
ICC1
tRC=30ns
CE=VIL, IOUT=0mA
-
15
Current
Program
ICC2
-
-
15
Erase
ICC3
-
-
15
Stand-by Current (TTL)
ICC4
CE=VIH,
WP=0V/Vcc
-
Stand-by Current (CMOS)
ICC5
CE=Vcc-0.2,
WP=0V/Vcc
-
10
Input Leakage Current
ILI
VIN=0 to Vcc (max)
-
-
Output Leakage Current
ILO
VOUT =0 to Vcc (max)
-
-
Input High Voltage
VIH
-
Vccx0.8
-
Input Low Voltage
VIL
-
-0.3
-
Output High Voltage Level
VOH
IOH=-400uA
2.4
-
Output Low Voltage Level
VOL
IOL=2.1mA
-
-
Output Low Current (R/B)
IOL
(R/B)
VOL=0.4V
8
10
Table 8: DC and Operating Characteristics
Max
30
30
30
1
50
± 10
± 10
Vcc+0.3
Vccx0.2
-
0.4
-
Unit
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
mA
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0 - 3.6V)
Table 9: AC Conditions
Value
3.3Volt
0V to Vcc
5ns
Vcc/2
1 TTL GATE and CL=50pF
1 TTLGATE and CL=100pF
Rev. 0.7 / Dec. 2006
21
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