IPS04N03LA 查看數據表（PDF） - Infineon Technologies
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IPS04N03LA Datasheet PDF : 12 Pages
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Parameter
Symbol Conditions
IPD04N03LA G IPF04N03LA G
IPS04N03LA G IPU04N03LA G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=25 A, R G=2.7 Ω
-
tf
-
3909
1488
174
14
11
44
6.6
5199 pF
1979
261
21 ns
16
66
10
Q gs
-
12
16 nC
Q g(th)
-
6.3
8.3
Q gd
V DD=15 V, I D=25 A,
-
8.1
12
Q sw
V GS=0 to 5 V
-
14
19
Qg
-
31
41
V plateau
-
3.0
-V
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
28
37 nC
Q oss
V DD=15 V, V GS=0 V
-
32
43
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=50 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
50 A
-
-
350
-
0.89
1.2 V
-
-
15 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.97
page 3
2006-05-17
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