SIHFP23N50L-E3(2011) 查看數據表（PDF） - Vishay Semiconductors

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SIHFP23N50L-E3
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

5.0

4.5

4.0

3.5

ID = 250 µA

3.0

2.5

2.0

1.5

1.0

- 75 - 50 - 25 0

25 50 75 100 125 150

TJ, Temperature (°C)

Fig. 13 - Threshold Voltage vs. Temperature

750

ID

TOP

10A

15A

600

BOTTOM 23A

450

300

150

0

25

50

75

100

125

Starting T , Junction Temperature

150

(°C)

Fig. 14 - Maximum Avalanche Energy s. Drain Current

15 V

VDS

L

Driver

RG

20 V

tp

D.U.T

IAS

0.01Ω

+

-

VDD

A

Fig. 15a - Unclamped Inductive Test Circuit

VDS

tp

IAS

Fig. 15b - Unclamped Inductive Waveforms

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 16a - Gate Charge Test Circuit

10 V

QGS

VG

QG

QGD

Charge

Fig. 16b - Basic Gate Charge Waveform

www.vishay.com

6

Document Number: 91209

S11-0445-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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