2N4401RLRM 查看數據表（PDF） - ON Semiconductor
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2N4401RLRM Datasheet PDF : 8 Pages
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2N4401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBEV
−
ICEX
−
Max
Unit
−
Vdc
−
Vdc
−
Vdc
0.1
mAdc
0.1
mAdc
hFE
−
20
−
40
−
80
−
100
300
40
−
VCE(sat)
−
−
0.4
Vdc
0.75
VBE(sat)
0.75
0.95
Vdc
−
1.2
fT
250
−
MHz
Ccb
−
6.5
pF
Ceb
−
30
pF
hie
1.0
15
k ohms
hre
0.1
8.0
X 10−4
hfe
40
500
−
hoe
1.0
30
mmhos
td
−
15
ns
tr
−
20
ns
ts
−
225
ns
tf
−
30
ns
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