2N4401RLRM 查看數據表（PDF） - ON Semiconductor

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2N4401RLRM

General Purpose Transistors NPN Silicon

ON Semiconductor 

2N4401

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between

hfe and other “h” parameters for this series of transistors. To

obtain these curves, a high−gain and a low−gain unit were

selected from the 2N4401 lines, and the same units were

used to develop the correspondingly numbered curves on

each graph.

300

200

100

70

50

30

20

0.1

2N4401 UNIT 1

2N4401 UNIT 2

0.2 0.3 0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 11. Current Gain

50 k

20 k

10 k

5.0 k

2.0 k

1.0 k

500

0.1

2N4401 UNIT 1

2N4401 UNIT 2

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mA)

Figure 12. Input Impedance

10

7.0

5.0

2N4401 UNIT 1

3.0

2N4401 UNIT 2

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.2 0.3 0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 13. Voltage Feedback Ratio

100

50

20

10

5.0

2.0

1.0

0.1

2N4401 UNIT 1

2N4401 UNIT 2

0.2 0.3 0.5 0.7 1.0

2.0 3.0

IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

Figure 14. Output Admittance

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