MBR2080CTG 查看數據表（PDF） - ON Semiconductor

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MBR2080CTG

SWITCHMODE™ Power Rectifiers

ON Semiconductor 

MBR2080CT, MBR2090CT, MBR20100CT

MAXIMUM RATINGS (Per Diode Leg)

MBR

Rating

Symbol 2080CT 2090CT 20100CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR) TC = 133°C

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 133°C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave,

single phase, 60 Hz)

VRRM

80

VRWM

VR

IF(AV)

IFRM

IFSM

90

100

10

20

150

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

Operating Junction Temperature (Note 1)

Storage Temperature

Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS

IRRM

TJ

Tstg

dv/dt

0.5

*65 to +175

*65 to +175

10,000

Maximum Thermal Resistance Junction−to−Case

Junction−to−Ambient

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

RqJC

2.0

RqJA

60

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 10 Amps, TC = 125°C)

(iF = 10 Amps, TC = 25°C)

(iF = 20 Amps, TC = 125°C)

(iF = 20 Amps, TC = 25°C)

vF

0.75

0.85

0.85

0.95

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TC = 125°C)

(Rated dc Voltage, TC = 25°C)

iR

6.0

0.1

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Unit

V

A

A

A

A

°C

°C

V/ms

°C/W

V

mA

ORDERING INFORMATION

Device

Package

Shipping†

MBR2080CT

MBR2080CTG

TO−220

TO−220

(Pb−Free)

50 Units / Rail

MBR2090CT

MBR2090CTG

TO−220

TO−220

(Pb−Free)

50 Units / Rail

MBR20100CT

MBR20100CTG

TO−220

TO−220

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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