MJ21193 查看數據表（PDF） - Inchange Semiconductor
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MJ21193 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJ21193
DESCRIPTION
·Total Harmonic Distortion Characterized
·High DC Current Gain
·High Area of Safe Operation
APPLICATIONS
·Designed for high power audio output, disk head positioners
and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Emitter Voltage
-400
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Pulsed
-30
A
IBB
Base Current-Continuous
-5
A
PD
Total Power Dissipation (TC=25℃)
250
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
Rth j-C ThermalResistance Junction To Case
0.7
UNIT
℃/W
isc Website：www.iscsemi.cn
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