MJD112G(2011) 查看數據表（PDF） - ON Semiconductor
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MJD112G Datasheet PDF : 8 Pages
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MJD112 (NPN)
MJD117 (PNP)
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
Max
100
100
5
2
4
Unit
Vdc
Vdc
Vdc
Adc
IB
50
mAdc
PD
20
W
0.16
W/°C
PD
W
1.75
W/°C
0.014
TJ, Tstg −65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
71.4
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
http://onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
12
3
4
DPAK
CASE 369C
MARKING
DIAGRAMS
AYWW
J11xG
1
23
4
DPAK−3
CASE 369D
YWW
J11xG
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
March, 2011 − Rev. 9
Publication Order Number:
MJD112/D
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